| 摘要 |
PURPOSE: A metal wiring forming method of a semiconductor device is provided to reduce a process step by forming a hard mask film using TiN with considering the etching selectivity of a photoresist pattern and an inter-layer insulating film. CONSTITUTION: A first insulating layer(101) is formed on a semiconductor substrate(100). A contact hole exposing the junction area of a semiconductor substrate is formed by etching the first insulating layer. The contact plug(102) filled with a conducting material is formed. The conducting material is formed on the overall structure including the contact hole. A etching prevention layer(103) and a second insulating layer(104) are formed on the overall structure including the contact plug. A hard mask layer and a photoresist layer are formed on the second insulating layer. A metal wiring(107) is formed by forming a metal wiring conductor material in the overall structure.
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