METHOD OF FORMING A GATE CONDUCTIVE FILM FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A gate conductive film formation method of a semiconductor device is provided to erase the capture space of electronics in the grain boundary of a polysilicon layer in a program operation by capturing nitrogen in the grain boundary of a polysilicon layer. CONSTITUTION: A gate insulating layer(103) is formed on the semiconductor substrate(101). A first conductive film(105) for a floating gate is formed on the gate insulating layer. The semiconductor substrate is formed into a bulk structure including a well. The first conductive film is formed into a first polysilicon layer including a plurality of first grains. The surface of the first conductive film is nitrified. The amorphous silicon film is formed on the top of the nitrified first conductive film. The second conductive film(109) for the floating gate consisted of a second poly-silicon is formed on the top of the nitrified first conductive film.