| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the device are provided to easily manufacture a metal film and a metal layer by preventing under cut on sidewall in deep via etching. CONSTITUTION: A first material layer(100A) and a second material layer having different etch rate successively are laminated. The second material layer is patterned and the etching mask(120B) is formed. The first material layer is etched and a via hole(124) is formed inside the first material layer by using the etching mask. The photo mask exposing the region(d2) wider than the via hole on the top of the etching mask is formed. The etching mask is etched by using the photo mask. The photo mask is removed. The oxidation barrier layer(130A) and a barrier metal(140A) are formed inside the via hole.
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