| 摘要 |
An amorphous film which consists substantially of indium, tin, calcium, and oxygen, and has a tin content and a calcium content of 5-15% in terms of Sn/(In+Sn+Ca) atom number ratio and 0.1-2.0% in terms of Ca/(In+Sn+Ca) atom number ratio, respectively, with the remainder being indium and oxygen. It is characterized in that the film, upon annealing at 260°C or lower, crystallizes and comes to have a resistivity of 0.4 mΩor lower. The ITO film is a thin ITO film for use in, e.g., a display electrode for flat panel displays. The amorphous ITO film is obtained by film deposition on a substrate by sputtering without heating the substrate and without water addition during the deposition. This ITO film has the property of crystallizing upon annealing at 260°C or lower, which is not so high, and thereby coming to have a lower resistivity than before the crystallization. Also provided are a process for producing the ITO film and a sinter for the film production.
|
