| 摘要 |
The present invention relates to a microelectronic device having a bipolar epitaxial structure that provides at least one bipolar transistor element formed over at least one field effect transistor (FET) epitaxial structure that provides at least one FET element. The epitaxial structures are separated with at least one separation layer. Additional embodiments of the present invention may use different epitaxial layers, epitaxial sub-layers, metallization layers, isolation layers, layer materials, doping materials, isolation materials, implant materials, or any combination thereof.
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