2 BIT MULTI-LEVEL FLASH MEMORY OF HAVING SEPARETED GATE

摘要

PURPOSE: Two bit multi-level flash memory of having a separated gate is provided to prevent a short channel by forming a channel according to pin shape of a memory. CONSTITUTION: A substrate(100) comprises a region which is recessed from the surface of the substrate. Two gate structures(200) fills a recessed region of the substrate. A source region(310) is formed on the side of the gate structure. The drain region(320) faces with the source region around the gate structure. The gate separation film(210) electrically divides two gate structures. A tunneling oxide film(120) is formed on the recessed region. A charge trapping layer(130) is formed with silicon nitride and is formed on the tunneling oxide film.