发明名称 |
Method of fabricating thin film transistor |
摘要 |
Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.
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申请公布号 |
US7655127(B2) |
申请公布日期 |
2010.02.02 |
申请号 |
US20060563454 |
申请日期 |
2006.11.27 |
申请人 |
3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
BENCH MICHAEL W.;THEISS STEVEN D.;HO GRACE L. |
分类号 |
C25D5/48 |
主分类号 |
C25D5/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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