发明名称 Method of fabricating thin film transistor
摘要 Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.
申请公布号 US7655127(B2) 申请公布日期 2010.02.02
申请号 US20060563454 申请日期 2006.11.27
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 BENCH MICHAEL W.;THEISS STEVEN D.;HO GRACE L.
分类号 C25D5/48 主分类号 C25D5/48
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