发明名称 Semiconductor device using MEMS technology
摘要 A semiconductor device using a MEMS technology according to an example of the present invention comprises a cavity, a lower electrode provided in a lower part of the cavity, an actuator provided in an upper part or inside of the cavity, an upper electrode connected to the actuator, and a conductive layer in contact with the lower electrode outside the cavity via a contact hole whose bottom face is provided above an upper face of the lower electrode in the cavity.
申请公布号 US7655995(B2) 申请公布日期 2010.02.02
申请号 US20060341853 申请日期 2006.01.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OHGURO TATSUYA
分类号 H01L27/20 主分类号 H01L27/20
代理机构 代理人
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