发明名称 |
Etching method, program, computer readable storage medium and plasma processing apparatus |
摘要 |
A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.
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申请公布号 |
US7655570(B2) |
申请公布日期 |
2010.02.02 |
申请号 |
US20060330336 |
申请日期 |
2006.01.12 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KIKUCHI AKIHIRO;SAKAMOTO YUICHIRO;TSUNODA TAKASHI |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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