发明名称 |
Method and apparatus for scanning and measurement by electron beam |
摘要 |
An inspection and measurement method and apparatus for semiconductor devices and patterns such as photomasks using an electron beam capable of measuring the potential of a sample with higher precision than conventional systems. When an S curve is observed in a semiconductor device to be inspected, fluctuations of the potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise measurement can be obtained without adverse effects from an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.
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申请公布号 |
US7655906(B2) |
申请公布日期 |
2010.02.02 |
申请号 |
US20060503997 |
申请日期 |
2006.08.15 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
CHENG ZHAOHUI;MAKINO HIROSHI;KOYAMA HIKARU;SATO MITSUGU |
分类号 |
G21K7/00;G01N23/00;H01J37/29 |
主分类号 |
G21K7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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