发明名称 Pattern inspection apparatus
摘要 A pattern inspection apparatus is disclosed, which includes a first laser light source for emission of first laser light having a first wavelength, a second laser light source for emission of second laser light having a second wavelength, and a deep ultraviolet (DUV) light source for emission of DUV light with a wavelength of less than or equal to 266 nm based on the first laser light and the second laser light. A first optical fiber is provided for connecting between the first laser light source and the DUV light source. A second optical fiber is for connection between the second laser light source and the DUV light source. The apparatus also includes a pattern inspection unit with the DUV light source being built therein, for inspecting a workpiece pattern being tested by using the DUV light as illumination light therefore.
申请公布号 US7656516(B2) 申请公布日期 2010.02.02
申请号 US20070781727 申请日期 2007.07.23
申请人 ADVANCED MASK INSPECTION TECHNOLOGY INC. 发明人 IMAI SHINICHI
分类号 G01N21/00;G01N21/956;G03F1/84;H01L21/027 主分类号 G01N21/00
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