发明名称 Power semiconductor device
摘要 One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.
申请公布号 US7656016(B2) 申请公布日期 2010.02.02
申请号 US20050295442 申请日期 2005.12.07
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YOSHIMATSU NAOKI;YOSHIDA TAKANOBU;SHINOHARA TOSHIAKI
分类号 H01L23/02;H01L23/36;H01L23/40;H01L25/07;H01L25/18;H02M7/48 主分类号 H01L23/02
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