| 摘要 |
<p>PURPOSE: A nonvolatile memory device and a method for fabricating the same are provided to improve the threshold voltage distribution property o Erase/Write cycling by securing a threshold voltage of a memory cell. CONSTITUTION: A first and a second gate electrodes(110,112) for a first and a second selection transistor(DST,SST) are formed on a substrate(100). A plurality of third gate electrodes(114) for the memory cell(MC0~MC31) are formed on the substrate between the first and the second gate electrode. A first impurity region(116) is formed within the substrate exposed between a first and a third gate electrode. A second impurity region(118) is formed within the first impurity region as a second conductive type. The second impurity region is formed with the same width as the width of the third gate electrode. The second impurity region is formed in the interface between the substrate and a tunnel insulating layer of the third gate electrode.</p> |
