| 摘要 |
PURPOSE: A gas supply method of processing a chamber for manufacturing a semiconductor and an apparatus for making the semiconductor are provided to maintain the whole amount of gas supplied inside a chamber by receiving second gas supplied to the outside of the chamber and intercepting an insert gas. CONSTITUTION: A first gas is supplied into a processing chamber(M10). A second gas reacting with the first gas is supplied to the outside of the processing chamber(M20). The supply volume of the insert gas and the supply volume of a second gas(M30) are identically controlled. The internal pressure of the processing chamber is controlled by the pressure required for manufacturing of the semiconductor device(M40). The supply path of the second gas supplied is changed to the outside of the processing chamber and flows into the inside of the processing chamber. The whole volume of supply gas to the process chamber is maintained constant by intercepting the supply of the insert gas to the process chamber.
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