| 摘要 |
PURPOSE: A programming method of a non-volatile memory device is provided to improve a program speed by applying exponentially or linearly decreasing pass voltage to memory cells which are not selected as a program voltage increases. CONSTITUTION: A plurality of memory cells connected between a source and a drain selection transistor are included. A program voltage(Vpgm) which gradually increases as a program cycle repeats is applied to a selected memory cell. A pass voltage which is in inverse proportion to a program voltage change is applied to a part of the memory cells which are not selected. The pass voltage decreases linearly or exponentially as the program voltage increases. The program voltage is applied to a word line of the selected memory cell. The pass voltage(Vpass) is applied to word lines of memory cells which are not selected and are not near the selected memory cell.
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