| 摘要 |
<p>PURPOSE: A method for forming a conductive layer pattern, a semiconductor device using the same and a method for fabricating the same are provided to form a vertical sidewall by forming a second pattern with a spacer as an each barrier. CONSTITUTION: A conductive film(310) is formed on a substrate(300). A hard mask layer(320A) is formed on the conductive film. The conductive film is etched and a first pattern(310A) is formed. A spacer is formed on the sidewall of the first pattern. The conductive film is etched by a spacer as an etch barrier and a second pattern is formed. An insulation spacer(340) is formed on the sidewall of the first pattern. The conductive layer pattern consisting of the first pattern and the second pattern has the vertical sidewall.</p> |
