发明名称 POWER SEMICONDUCTOR MODULE
摘要 PURPOSE: A power semiconductor module is provided to prevent the damage of harden resin by preventing a relative motion according to temperature between a bridge factor and a substrate. CONSTITUTION: A substrate(12) comprises a load connection element(38) and an interconnect(20) for a power semiconductor component on a first main surface. The substrate comprises a metal layer(24) for heat dissipation on the second main surface(22). The bridge factor is arranged within the package(14). The substrate includes units restricting all directions parallel with the first and the second main surface. The bridge factor comprises a sidewall(30), a finger-type pressure factor, and a guide shaft. The package comprises a frame element(42) and a covering element(44).
申请公布号 KR20100010494(A) 申请公布日期 2010.02.01
申请号 KR20090066723 申请日期 2009.07.22
申请人 SEMIKRON ELEKTRONIK GMBH & CO. KG 发明人 RAINER POPP;MARKUS GRUBER
分类号 H01L23/34 主分类号 H01L23/34
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