| 摘要 |
<p>PURPOSE: A fabricating method of an oxide thin film transistor is provided to use an amorphous zinc oxide group semiconductor as an active layer, thereby obtaining superior uniformity. CONSTITUTION: A gate electrode(121) is formed on a substrate(110). A gate insulating layer(115) is formed on the substrate. An active layer, made of an amorphous zinc oxide group semiconductor, is formed on the upper part of the gate electrode by controlling the concentration of oxide from 1~9.4% in a gas reaction during sputtering. A source electrode(122) and a drain electrode(123), which electrically connect to a source area and a drain area of the active layer, are formed on the upper part of the active layer. The active layer is formed into a-IGZO semiconductor.</p> |
