| 摘要 |
<p>A multi-layered wafer support apparatus is provided for performing an electroplating process on a semiconductor wafer (107). The multi-layered wafer support apparatus includes a bottom film layer (201) and a top film layer (301). The bottom film layer includes a wafer placement area and a sacrificial anode surrounding the wafer placement area. The top film layer is defined to be placed- over the bottom film layer. The top film layer includes an open region to be positioned over a surface of the wafer to be processed, i.e., electroplated. The top film layer provides a liquid seal (313) between the top film layer and the wafer, about a periphery of the open region. The top film layer further includes first and second electric circuits (307a, 307b) that are each; defined to electrically contact a. peripheral top surface of the wafer at diametrically opposed locations about the wafer. Fig. 5A</p> |
