发明名称 METHOD FOR OBTAINING A THIN LAYER HAVING A LOW DENSITY OF HOLES
摘要 <p>The invention proposes a method for determining the thickness of a part of a donor substrate which is to be transferred onto a support substrate, said part being intended to be thereafter submitted to a selected finishing sequence comprising at least one operation, the method being characterized in that a minimum thickness to be transferred is determined for said transferred part: to present, after each operation of the finishing sequence, a density of killing holes less than said maximal density, and to reach said selected thickness once the complete finishing sequence achieved.</p>
申请公布号 SG158184(A1) 申请公布日期 2010.01.29
申请号 SG20090086588 申请日期 2004.12.28
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 BEN MOHAMED, NADIA;NEYRET, ERIC;DELPRAT, DANIEL
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