发明名称 |
METHOD FOR OBTAINING A THIN LAYER HAVING A LOW DENSITY OF HOLES |
摘要 |
<p>The invention proposes a method for determining the thickness of a part of a donor substrate which is to be transferred onto a support substrate, said part being intended to be thereafter submitted to a selected finishing sequence comprising at least one operation, the method being characterized in that a minimum thickness to be transferred is determined for said transferred part: to present, after each operation of the finishing sequence, a density of killing holes less than said maximal density, and to reach said selected thickness once the complete finishing sequence achieved.</p> |
申请公布号 |
SG158184(A1) |
申请公布日期 |
2010.01.29 |
申请号 |
SG20090086588 |
申请日期 |
2004.12.28 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
BEN MOHAMED, NADIA;NEYRET, ERIC;DELPRAT, DANIEL |
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