发明名称 COMPOUND SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND COMPOUND SEMICONDUCTOR DEVICE USING THE SAME
摘要 PURPOSE: A compound semiconductor substrate, method for manufacturing the same, and compound semiconductor device using the same are provided to improve the photonic efficiency of the semiconductor device. CONSTITUTION: The substrate(10) is prepared. Substrate is etched. The rough pattern is formed in the surface of substrate. The reflective film(20) is evaporated in the total surface of substrate. In order that a part of the reflective film remains in the sidewall part of the unevenness pattern, a part of the reflective film is controlled. Compound semiconductor layers(41,43) are formed in the top of the substrate. The reflective film reflects the light of the substrate side with the semiconductor layer. The quantity of radiation absorbed by the substrate based on of substrate is reduced.
申请公布号 KR20100008513(A) 申请公布日期 2010.01.26
申请号 KR20080069037 申请日期 2008.07.16
申请人 SILTRON INC. 发明人 LEE, HO JUN;KIM, JI WON;JEON, SU IN;KIM, JI HOON
分类号 H01L33/20;H01L33/10;H01L33/22 主分类号 H01L33/20
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