发明名称 Level conversion circuit for converting voltage amplitude of signal
摘要 In a level conversion circuit, two P channel MOS transistors form a current mirror circuit. When an input signal rises from the "L" level to the "H" level, an N channel MOS transistor connected to a drain of one P channel MOS transistor is brought out of conduction to prevent a leak current from flowing through two P channel MOS transistors, which decreases a power consumption. In addition, when the input signal rises from the "L" level to the "H" level, a P channel MOS transistor connected to a drain of the other P channel MOS transistor is brought into conduction to fix a potential of a node of the drain of the other P channel MOS transistor to the "H" level, which prevents the potential of the node from becoming unstable.
申请公布号 US7652505(B2) 申请公布日期 2010.01.26
申请号 US20080230007 申请日期 2008.08.21
申请人 RENESAS TECHNOLOGY CORP. 发明人 KANZAKI TERUAKI
分类号 H03K19/0175;G01R19/00;G05F1/10;G05F3/02;G11C7/00;H03F3/45;H03K3/01;H03K19/00;H03K19/02;H03K19/094;H03K19/20;H03L5/00 主分类号 H03K19/0175
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