发明名称 |
Manufacturing method of a nonvolatile semiconductor memory device |
摘要 |
A manufacturing method of a nonvolatile semiconductor memory device including: providing a first insulating film and a silicon film on a semiconductor substrate; providing a fifth insulating film containing silicon and oxygen on the silicon film; providing a second insulating film containing silicon and nitrogen on the fifth insulating film; providing a third insulating film on the second insulating film, the third insulating film is composed of a single-layer insulating film containing oxygen or multiple-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, and relative dielectric constant of the single-layer insulating film and the stacked insulating film being larger than relative dielectric constant of a silicon oxide film; providing a fourth insulating film containing silicon and nitrogen on the third insulating film; and providing a control gate above the fourth insulating film.
|
申请公布号 |
US7651914(B2) |
申请公布日期 |
2010.01.26 |
申请号 |
US20080176559 |
申请日期 |
2008.07.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
AKAHORI HIROSHI;TAKEUCHI WAKAKO;OZAWA YOSHIO |
分类号 |
H01L21/336;H01L21/28;H01L21/3205 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|