发明名称 |
PHASE CHANGE MEMORY DEVICE AND CONTROLLING METHOD THEREOF |
摘要 |
PURPOSE: A phase change memory device and controlling method thereof are provided to improve the program speed and efficiency by omitting programming of code data. CONSTITUTION: The phase change memory chip is fixed to the printed circuit board through the IR (Infrared) reflow process(S10). The reset data is changed due to heat added in the phase-change memory chip to the state of the set data(S20). The operation in which set data is lighted in the memory cell of the phase-change memory chip is deactivated(S30). The code of reset data is programmed at high speed in the phase-change memory chip(S40). |
申请公布号 |
KR20100008624(A) |
申请公布日期 |
2010.01.26 |
申请号 |
KR20080069190 |
申请日期 |
2008.07.16 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KANG, HEE BOK;HONG, SUK KYOUNG |
分类号 |
G11C13/02;G11C16/10 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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