发明名称 PHASE CHANGE MEMORY DEVICE AND CONTROLLING METHOD THEREOF
摘要 PURPOSE: A phase change memory device and controlling method thereof are provided to improve the program speed and efficiency by omitting programming of code data. CONSTITUTION: The phase change memory chip is fixed to the printed circuit board through the IR (Infrared) reflow process(S10). The reset data is changed due to heat added in the phase-change memory chip to the state of the set data(S20). The operation in which set data is lighted in the memory cell of the phase-change memory chip is deactivated(S30). The code of reset data is programmed at high speed in the phase-change memory chip(S40).
申请公布号 KR20100008624(A) 申请公布日期 2010.01.26
申请号 KR20080069190 申请日期 2008.07.16
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, HEE BOK;HONG, SUK KYOUNG
分类号 G11C13/02;G11C16/10 主分类号 G11C13/02
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