发明名称 |
Memory including two access devices per phase change element |
摘要 |
A memory includes a bit line and a phase change element. A first side of the phase change element is coupled to the bit line. The memory includes a first access device coupled to a second side of the phase change element and a second access device coupled to the second side of the phase change element. The memory includes a circuit for precharging the bit line and one of selecting only the first access device to program the phase change element to a first state and selecting both the first access device and the second access device to program the phase change element to a second state.
|
申请公布号 |
US7652914(B2) |
申请公布日期 |
2010.01.26 |
申请号 |
US20070651157 |
申请日期 |
2007.01.09 |
申请人 |
QIMONDA NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
NIRSCHL THOMAS;CHEEK ROGER;LAMOREY MARK;LEE MING-HSIU |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|