| 摘要 |
A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; and forming an emitter region over the compound base region including forming a first emitter layer within the emitter region and doping the first emitter layer with a pre-determined percentage of at least one element associated with the compound base region. In one implementation, an emitter region is formed including multiple emitter layers to enhance a surface recombination surface area within the emitter region.
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