发明名称 |
Process of forming an electronic device including active regions and gate electrodes of different compositions overlying the active regions |
摘要 |
A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.
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申请公布号 |
US7651935(B2) |
申请公布日期 |
2010.01.26 |
申请号 |
US20050237346 |
申请日期 |
2005.09.27 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ADETUTU OLUBUNMI O.;LUO TIEN YING;RAMANI NARAYANAN C. |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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