Light emitting device with high light extraction efficiency

摘要

An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure is formed on the substrate and includes a first-type semiconductor layer and a second-type semiconductor layer. The first electrode is electrically connected with the first-type semiconductor layer. The second electrode includes a transparent conductive layer formed on the second-type semiconductor layer and a metallic conductive layer formed on a region of the transparent conductive layer and in electrical contact therewith. Any point on the region is no more than 300 micrometers from a nearest part of the metallic conductive layer, and an exposed portion uncovered by the metallic conductive layer of the region has an area of at least 80% of a total area of the transparent conductive layer.