发明名称 Semiconductor light-emitting device
摘要 Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
申请公布号 US7653107(B2) 申请公布日期 2010.01.26
申请号 US20080104756 申请日期 2008.04.17
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 HISA YOSHIHIRO;YAMAGUCHI TSUTOMU;NISHIDA TAKEHIRO;HIRAMATSU KENJI
分类号 H01S5/00;H01S5/02;H01S5/022 主分类号 H01S5/00
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