| 摘要 |
To achieve high sensitivity in such a manner that photoelectric charges generated by photoelectric conversion films are made to flow into gates of output transistors smoothly to increase a signal voltage relative to signal charges, a solid-state imaging device includes: a semiconductor substrate having signal readout circuits constituted by MOS transistor circuits; photoelectric conversion films stacked on the semiconductor substrate for generating signal charges in accordance with the incident light intensity; connection portions provided on the surface of the semiconductor substrate and connected to wirings leading the signal charges to the surface of the semiconductor substrate; charge paths provided so that the connection portions can be connected to gate portions of output transistors (sources of reset transistors) constituting the signal readout circuits; and potential barrier units provided near the connection portions so as to serve as constant potential barriers relative to charges of the connection portions.
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