发明名称 |
Split-gate memory cells and fabrication methods thereof |
摘要 |
Split-gate memory cells and fabrication methods thereof. A split-gate memory cell comprises a plurality of isolation regions formed on a semiconductor substrate along a first direction, between two adjacent isolation regions defining an active region having a pair of drains and a source region. A pair of floating gates are disposed on the active regions and self-aligned with the isolation regions, wherein a top level of the floating gate is equal to a top level of the isolation regions. A pair of control gates are self-aligned with the floating gates and disposed on the floating gates along a second direction. A source line is disposed between the pair of control gates along the second direction. A pair of select gates are disposed on the outer sidewalls of the pair of control gates along the second direction.
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申请公布号 |
US7652318(B2) |
申请公布日期 |
2010.01.26 |
申请号 |
US20060592290 |
申请日期 |
2006.11.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSIEH CHANG-JEN;SUNG HUNG-CHENG;CHU WEN-TING;HUANG CHEN-MING;KAO YA-CHEN;LIU SHIH-CHANG;LO CHI-HSIN;YU CHUNG-YI;TSAI CHIA-SHIUNG |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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