METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH RECESS GATE

摘要

PURPOSE: A method for fabricating semiconductor device with recess gate is provided to prevent the loss by protecting the shallow trench isolation. CONSTITUTION: The active area is defined by the formation of the STI(Shallow Trench Isolation)(22) on the substrate(21). In the top of the substrate of the active area, the mask pattern(23A) is formed. The mask pattern has the opening of the second width and the first width. The opening of the first width opens the recess pattern forming area. The opening of the second width exposes the element isolation film. The protective film is formed on the mask pattern according to the stepped portion. Using the etching of substrate, the recess pattern(26) is formed. The protective film and mask pattern are removed. The gate pattern is formed.