METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING TRENCH ETCH

摘要

PURPOSE: A method for fabricating semiconductor device using trench etch is provided to form easily the line pattern including the bit line etc on the reduction of the design rule. CONSTITUTION: The second insulating layer(22) is formed on the first insulating layer(21). The second insulating layer is etched. A plurality of trenchs is formed. The spacer(28) is formed in the sidewall of the trench. The line pattern(200) is formed. The line pattern is buried inside the trench. The third dielectric polish layer(31) is formed on the second insulating layer. The line pattern is formed on the second insulating layer. The bit line remains behind through the etch back inside the trench. Therefore, the bit line is easily formed.