| 摘要 |
<p>PURPOSE: A method of forming a gate in a semiconductor memory device is provided to inject the O- ion within the first protective film. CONSTITUTION: The gate pattern is formed on the semiconductor substrate(100). In the gate pattern, the tunnel insulating film(101), the first conductive film(102), the dielectric film(103), second conductive film(104) is laminated. In the semiconductor top of the substrate, the first protective film(107) is formed. Using the plasma processing, the ion for impurity trapping is inserted within the first protective film. The ion for the impurity trap prevents the penetration to the gate pattern of the H+ ion. The second protective film(108) is included on the overall structure. The overall structure comprises the first protective film.</p> |
