| 摘要 |
1338566 Metallic films INTERNATIONAL BUSINESS MACHINES CORP 3 Dec 1970 [30 Dec 1969] 57384/70 Heading C7F [Also in Division H1] When a metallic film is deposited on a substrate having a different thermal co-efficient of expansion from the film, the film is doped with one or more alloying additions which interact with defects in the film so that hillock formation on the surface of the film is inhibited when the film and substrate are thermally cycled within a given temperature range. A layer of insulating material is formed on the film e.g. by sputtering the thickness of the layer being such that it would be damaged by the formation of hillocks. If the film is of Al the alloying addition may be selected from Be, Cu, Mg, Si and Th and if the film is of Pb, then Au, Al, Ag, As, Sn, Sb or Si may be added. Suitable substrates include oxidized Si, glass, silicon, monoxide, quartz, mica, sapphire, nitrides, sulphides, carbides alumina and metals. The substrate 2-14 is held in a holder 2-16 and may be heated by a heater 2-18. The film material and the doping material are evaporated from separate crucibles 2-20 and 2-22 either simultaneously or consecutively and the rate of deposition of each material monitored by quartz crystal oscillators 2-28 and 2-30 which change their frequency depending on the amount of metal deposited on quartz crystals 2-29 and 2-31. The beginning and end of a deposition run is controlled by a shutter 2-39 operated via a knob 2-40. Examples describe the preparation of a 10, 000Š thick Al film deposited at 200‹C. on an oxidized Si substrate and doped with Cu or Mg and subsequently annealed at 530‹C. and a 2000-3000A thick Pb film deposited at room temperature on an oxidized Si or glass substrate and doped with between 7 per cent and 10 per cent of Ag or Au. |
