| 摘要 |
<p>PURPOSE: A manufacturing method of image sensor is provided to form the contact hole of the fixed size on the photodiode layer. CONSTITUTION: The hard mask layer is formed on the photodiode layer(140). The photoresist pattern is formed in the top of hard mask. The first trench is formed in the hard mask layer. The ion injection etching layer is formed in the photodiode layer. Using the etching of the ion injection method, the second trench is formed. Using the etching of the domain of the metal wiring layer(200) corresponding to second trench, the third trench(166) is formed. The third trench exposes the metal wiring(210).</p> |
