METHOD OF PROCESSING WAFER

摘要

PURPOSE: A method for processing a wafer is provided to form a relaxation gettering layer and a segregation gettering layer on one wafer at the same time by forming the segregation gettering layer on a lower side of the wafer by an ion implantation process. CONSTITUTION: A wafer(100) is formed. A thermal process is performed on the wafer. A relaxation gettering layer(102) is formed on the surface of the wafer with the thermal process. An ion implantation process with high density is performed on a lower side of the wafer for collecting metal impurities of the wafer. A boron ion is used for the ion implantation process. An ion implantation layer like a segregation gettering layer(106) is formed on a part adjacent to the lower side of the wafer. The segregation gettering layer has high solid solubility.