HIGH INTEGRATED SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: An integrated semiconductor memory is provided to implement each unit cell with an area below 8F2 by independently connecting a source line. CONSTITUTION: A source area is not shared between adjacent unit cells through a device isolation layer(634). The device isolation layer electrically separates an active area(632). A source line contact(652) and a bit line contact(662) connect a source line(650) and a bit line(660) with the active area. Two unit cells are formed on one active area and share a drain area. Two unit cell are connected to the bit line through the bit line contact and are connected to the independent source line through the different source line contact.