| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to form a conductive film pattern with a positive profile by increasing an etching by-product in a conductive film etching process. CONSTITUTION: A conductive film and a hard mask layer are formed on a substrate(300). A photoresist pattern for a preset pattern is formed on the hard mask layer. The photoresist pattern is used as the etching barrier. The hard mask layer is etched by the photoresist pattern. A hard mask pattern(320A) is formed. At least hard mask pattern is used as an etching barrier. The conductive film is etched by at least hard mask pattern. A conductive film pattern(310A) is formed. The conductive film pattern has a positive profile of the protruded center part.</p> |
