| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent impurity from permeating into a substrate through a gate insulation layer between processes by installing the gate insulation layer with nitrogen density gradient in the layer. CONSTITUTION: A semiconductor device includes a substrate(21), a gate insulation layer(24), and a gate electrode(25). The gate insulation layer is comprised of a nitrogen containing layer. The gate insulation layer has the lowermost nitrogen density on an interface. The interface is contacted with the substrate. The nitrogen of the gate insulation layer prevents the impurity of the gate electrode from permeating into the substrate through the gate insulation layer. The nitrogen density of the gate insulation layer ranges from 1 to 20 %.</p> |
