| 摘要 |
<p>PURPOSE: A method for manufacturing a nonvolatile memory device is provided to improve a program speed of a high integrated device by installing a side bent part on a second conductive layer for a floating gate. CONSTITUTION: A device isolation layer(23) is formed on a field area. A substrate is provided to an active area. A first conductive layer(22) for a floating gate is formed on the substrate. A rack(30) is formed on the device isolation layer. DBARC film patterns(24A,26A,28A) and photoresist film patterns(25C,27C,29C) are alternatively stacked on the rack. The photoresist film patterns have a larger CD(Critical Dimension) than the CD of the DBARC film patterns. A second conductive layer(31) for the floating gate is formed. The second conductive layer for the floating gate is separated while interposing the rack. The rack is removed.</p> |
