| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus capable of easily connecting an electrode to exterior. <P>SOLUTION: A semiconductor laser apparatus 100 has: an infrared semiconductor laser element 10 formed on an n-type GaAs substrate 51 on whose surface an undoped GaAs layer 52 (52a and 52b) with insulation is formed, and which has an n-type AlGaAs clad layer 11, an active layer 12 and a p-type AlGaAs clad layer 13 in this order; a red semiconductor laser element 20 having an n-type AlGaInP clad layer 21, an active layer 22 and a p-type AlGaInP clad layer 23 in this order; and a blue-violet semiconductor laser element 40 joined on the surface of the n-type GaAs substrate 51 via a fusion layer 60 and electrically connected with the n-type GaAs substrate 51, and which has a p-type AlGaN clad layer 43, an active layer 42 and an n-type AlGaN clad layer 41 from the n-type GaAs substrate 51 side in this order. <P>COPYRIGHT: (C)2010,JPO&INPIT |
