发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of setting the temperature of a plasma treatment chamber accurately to a specific state, and performing an accurate plasma treatment, while maintaining a constant plasma treatment characteristic. <P>SOLUTION: This plasma treatment apparatus for subjecting a treatment object (w) to a plasma treatment in a plasma treatment chamber 1 includes: a database 25 for correlating and storing the internal temperature of the plasma treatment chamber 1 and a plasma-generating condition; a model type storage part 26 for storing the correlating equation of the internal temperature of the plasma treatment chamber 1 and the plasma-generating condition from the database 25; a computer 21 having an operation part 24 for creating the correlation equation and the optimum plasma-generating conditions, further having a process monitor 31 for monitoring the condition of the plasma treatment, wherein the value output by the process monitor and the temperature of the plasma treatment chamber are correlated and stored in the database 25; and the computer 21 computes plasma treatment conditions, such as to set a substantially constant plasma treatment chamber temperature, based on which plasma treatment is executed. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010016159(A) 申请公布日期 2010.01.21
申请号 JP20080174428 申请日期 2008.07.03
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 IWAKOSHI TAKENAO;SAITO TAKESHI
分类号 H01L21/3065;H01L21/205;H05H1/00;H05H1/46 主分类号 H01L21/3065
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