| 摘要 |
<P>PROBLEM TO BE SOLVED: To develop a simple through-hole formation technique which can alternate a conventional through-hole formation technique and has high productivity since it is necessary that a device such as a dry-etching method and a laser method uses an expensive through-hole formation technique with low productivity when forming a through-hole for a penetration electrode on a silicon substrate. Ž<P>SOLUTION: In a manufacturing method for a silicon substrate for forming the through-hole or a non-through-hole by a drill while locally cooling the silicon substrate, the number of rotation of the drill is a range of 8,000-50,000 rpm. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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