| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor using an oxide semiconductor in which production efficiency is improved while a microscopic oxide semiconductor pattern is formed. SOLUTION: In the method of manufacturing the thin film transistor in which the oxide semiconductor layer is formed by forming a thin film of the oxide semiconductor or its precursor and then forming a resist pattern on the thin film, and patterning the thin film by removing the thin film outside than the resist pattern, the resist pattern is formed by using an electrostatic attraction type liquid discharging device. COPYRIGHT: (C)2010,JPO&INPIT
|
