摘要 |
<p>A process for depositing a film onto a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (6, 106, 206), in which at least two electrodes (10, 110, 210) are placed. A high-frequency electrical voltage is generated, said voltage being such that it generates filamentary plasma (12, 112, 212) between the two electrodes (10, 110, 210). An adjustable inductor (L) placed in parallel with the inductor of the installation generating the electrical voltage is employed so as to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112, 212).</p> |
申请人 |
AGC FLAT GLASS EUROPE S.A.;TIXHON, ERIC;LECLERCQ, JOSEPH;MICHEL, ERIC |
发明人 |
TIXHON, ERIC;LECLERCQ, JOSEPH;MICHEL, ERIC |