| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for forming several kinds of transistors on the same semiconductor substrate by a simple process. Ž<P>SOLUTION: The manufacturing method of a semiconductor device includes: a process for simultaneously forming a second-conductivity-type first well 30 in an LDMOS region 100 and an offset drain MOS region 200; a process for simultaneously forming a first-conductivity-type second well 32 in the first well 30 of the LDMOS region 100, and a CMOS region 100; a process for forming a second-conductivity-type second well 34 in a CMOS region 300; and a process for forming a first-conductivity-type offset layer 22 in the offset drain MOS region 200. In this case, the first well 30 is deeper than the second wells 32, 34, and the second wells 32, 34 are retrograde wells formed by a high-energy ion implantation method. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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