| 摘要 |
A Schottky barrier MOSFET (SB-MOS) device and a method of manufacturing having a silicon-on-nothing (SON) architecture in a channel region are provided. More specifically, metal source/drain SB-MOS devices are provided in combination with a channel structure comprising a semiconductor channel region such as silicon isolated from a bulk substrate by an SON dielectric layer. In one embodiment, the SON dielectric layer has a triple stack structure comprising oxide on nitride on oxide, which is in contact with the underlying semiconductor substrate.
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