PLASMA CVD APPARATUS, DLC FILM, AND METHOD FOR PRODUCING THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can increase a voltage VDCthat is a DC component generated in an electrode while a high-frequency power discharges electricity when forming a film with a CVD technique. SOLUTION: The plasma CVD apparatus includes: a chamber 1; a holding electrode 2 which is arranged in the chamber and holds a substrate to be film-formed; a high-frequency power source 8 which is electrically connected to the holding electrode 2; a counter electrode 12 which is arranged so as to oppose to the substrate to be film-formed held by the holding electrode 2 and is connected to a ground power source or a floating power source; a source-gas-feeding mechanism which feeds a source gas to a space 13 between the counter electrode 12 and the holding electrode 2; and an exhausting mechanism which evacuates the inside of the chamber. The surface areas of the holding electrode 2 and the counter electrode 12 satisfy the expression of b/a≥2 when the surface areas are defined as a and b, respectively. COPYRIGHT: (C)2010,JPO&INPIT