| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element which can drive in lower output, higher in luminous efficiency, and emits light of long wavelength of about 440-550 nm. Ž<P>SOLUTION: The nitride semiconductor laser element is characterized by including at least a first n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an active layer, and a second n-type nitride semiconductor layer on a substrate from the side of the substrate in this order. The nitride semiconductor laser element is constructed in such a manner that the substrate or the first n-type nitride semiconductor layer contacts with a first electrode, the second n-type nitride semiconductor layer contacts with a second electrode, the first electrode is an anode electrode, and the second electrode is a cathode electrode. It is preferable to provide a conductive oxide layer to the second n-type nitride semiconductor layer on the opposite side to the active layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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